Problems with the continuous doping TCAD simulations of decananometer CMOS transistors

Asenov, A. , Adamu-Lema, F., Wang, X. and Amoroso, S. M. (2014) Problems with the continuous doping TCAD simulations of decananometer CMOS transistors. IEEE Transactions on Electron Devices, 61(8), pp. 2745-2751. (doi: 10.1109/TED.2014.2332034)

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In this paper, we compare results from atomistic and continuous simulation of decananometer scale CMOS transistors. We study the behavior of important figures of merit, including threshold voltage, subthreshold slope, OFF-current, and ON-current. We provide physical explanation for the origin of the discrepancies between the averaged values obtained from the statistical simulations and the results from the continuous doping simulation. Based on our analysis, we clearly demonstrate that there are increasing errors in the doping distributions when device TCAD simulations are calibrated using continuous doping profiles. This questions the use of continuous doping profiles in the routine calibration and TCAD-based optimization of decananometer scale CMOS transistors.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Amoroso, Dr Salvatore and Wang, Dr Xingsheng and Asenov, Professor Asen and Adamu-Lema, Dr Fikru
Authors: Asenov, A., Adamu-Lema, F., Wang, X., and Amoroso, S. M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
ISSN (Online):1557-9646

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