Li, X. , Ignatova, O. , Cao, M., Peralagu, U. , Steer, M., Mirza, M. , Zhou, H. and Thayne, I. (2013) 10 nm vertical In0.53Ga0.47As line etching process for III-V MOSFET fabrication by using inductively coupled plasma (ICP) etcher in Cl2/CH4/H2 chemistry. In: 26th International Microprocesses and Nanotechnology Conference (MNC), Royton Sapporo, Hokkaido, Japan, 5-8 Nov 2013,
Full text not currently available from Enlighten.
Publisher's URL: http://imnc.jp/2013/
Abstract
No abstract available.
Item Type: | Conference Proceedings |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Mirza, Dr Muhammad M A and Zhou, Dr Haiping and Thayne, Prof Iain and Peralagu, Mr Uthayasankaran and Steer, Dr Matthew and Li, Dr Xu and Ignatova, Dr Olesya |
Authors: | Li, X., Ignatova, O., Cao, M., Peralagu, U., Steer, M., Mirza, M., Zhou, H., and Thayne, I. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
University Staff: Request a correction | Enlighten Editors: Update this record