Papageorgiou, V., Khalid, A.-u.-H. , Li, C. and Cumming, D. R.S. (2014) Co-fabrication of planar Gunn diode and HEMT on InP substrate. IEEE Transactions on Electron Devices, 61(8), pp. 2779-2784. (doi: 10.1109/TED.2014.2331368)
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Publisher's URL: http://www.dx.doi.org/10.1109/TED.2014.2331368
Abstract
We present the co-fabrication of planar Gunn diodes and high electron mobility transistors (HEMTs) on an Indium Phosphide (InP) substrate for the first time. Electron beam lithography (EBL) has been used extensively for the complete fabrication procedure and a 70 nm T-gate technology was incorporated for the enhancement of the small-signal characteristics of the HEMT. Diodes with anode-to-cathode separation (Lac) down to 1 μm and 120 μm width where shown to oscillate up to 204 GHz. The transistor presents a cut-off frequency (fT) of 220 GHz, with power gain up to 330 GHz (f<sub>max</sub>). The integration of the two devices creates the potential for the realisation of high-power, high-frequency MMIC Gunn oscillators, circuits and systems.
| Item Type: | Articles |
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| Additional Information: | Copyright © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Li, Professor Chong and Cumming, Professor David and Papageorgiou, Mr Vasileios and Khalid, Dr Ata-Ul-Habib |
| Authors: | Papageorgiou, V., Khalid, A.-u.-H., Li, C., and Cumming, D. R.S. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Transactions on Electron Devices |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 0018-9383 |
| ISSN (Online): | 1557-9646 |
| Copyright Holders: | Copyright © 2014 IEEE |
| First Published: | First published in IEEE Transactions on Electron Devices 61(8):2779-2784 |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher. |
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