Resistive switching in ZrO2 films: physical mechanism for filament formation and dissolution

Parreira, P. , McVitie, S. and MacLaren, D. (2014) Resistive switching in ZrO2 films: physical mechanism for filament formation and dissolution. Journal of Physics: Conference Series, 522, 012045. (doi: 10.1088/1742-6596/522/1/012045)

Abstract

Resistive switching devices, also called memristors, have attracted much attention due to their potential memory, logic and even neuromorphic applications. Multiple physical mechanisms underpin the non-volatile switching process and are ultimately believed to give rise to the formation and dissolution of a discrete conductive filament within the active layer. However, a detailed nanoscopic analysis that fully explains all the contributory events remains to be presented. Here, we present aspects of the switching events that are correlated back to tunable details of the device fabrication process. Transmission electron microscopy and atomically resolved electron energy loss spectroscopy (EELS) studies of electrically stressed devices will then be presented, with a view to understanding the driving forces behind filament formation and dissolution.

• Item Type: Articles
• Additional Information: JPCS Volume 522: Electron Microscopy and Analysis Group Conference 2013 (EMAG2013)
• Keywords: JPCS Volume 522: Electron Microscopy and Analysis Group Conference 2013 (EMAG2013)
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: McVitie, Professor Stephen and MacLaren, Professor Donald and Parreira, Dr Pedro Miguel
• Authors: Parreira, P., McVitie, S., and MacLaren, D.
• Subjects: Q Science > QC Physics
• College/School: College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Journal of Physics: Conference Series
• Publisher: Institute of Physics Publishing Ltd.
• ISSN: 1742-6588
• ISSN (Online): 1742-6596
• Copyright Holders: Copyright © 2014 IOP Publishing Ltd
• First Published: First published in Journal of Physics: Conference Series 522:012045
• Publisher Policy: Reproduced under a Creative Commons License