Yang, G.-L., Wang, L.-Q., Lu, X.-Y. and Jin, Z.-S. (2002) Effect of hydrogen gas flow rate on the deposition of diamond films. Chemical Journal of Chinese Universities, 23(9), pp. 1735-1737.
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Publisher's URL: http://www.cjcu.jlu.edu.cn/EN/abstract/abstract17593.shtml
Abstract
Thick diamond films have been deposited by Electron Assisted Hot Filament Chemical Vapor Deposition Method. The effects of hydrogen gas flow rate on the diamond films growth rate and diamond qualities have been studied. It is found that, with the gas flow rate increasing, in the range of 100 to 750 cm3/min, the diamond films growth rates increase while the diamond qualities get worse, and in the range of 750 to 1000 cm3/min the diamond films growth rates decrease whilethe diamond qualities are improved. Raman spectroscopy and Electron Paramagnetic Resonance has been used to detect the impurities of Nitrogen. The concentration of nitrogen in the diamond film decreases with the increase of gas flow rate, and it is 40 times higher in diamond films deposited at 100 cm3/min than that at 1000 cm3/min.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Wang, Ms Liqiu and Yang, Dr Guangliang |
| Authors: | Yang, G.-L., Wang, L.-Q., Lu, X.-Y., and Jin, Z.-S. |
| College/School: | College of Science and Engineering > School of Physics and Astronomy |
| Journal Name: | Chemical Journal of Chinese Universities |
| Publisher: | Higher Education Press |
| ISSN: | 0251-0790 |
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