Silver antimony Ohmic contacts to moderately doped n-type germanium

Dumas, D.C.S., Gallacher, K. , Millar, R. , MacLaren, I. , Myronov, M., Leadley, D.R. and Paul, D.J. (2014) Silver antimony Ohmic contacts to moderately doped n-type germanium. Applied Physics Letters, 104(16), p. 162101. (doi: 10.1063/1.4873127)

93348.pdf - Accepted Version



A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge ( ND=1×1018 cm−3) annealed at 400 °C produces an Ohmic contact with a measured specific contact resistivity of (1.1±0.2)×10−5 Ω-cm2. It is proposed that the Ohmic behaviour arises from an increased doping concentration at the Ge surface due to the preferential evaporation of Sb confirmed by transmission electron microscope analysis. It is suggested that the doping concentration has increased to a level where field emission will be the dominate conduction mechanism. This was deduced from the low temperature electrical characterisation of the contact, which exhibits Ohmic behaviour down to a temperature of 6.5 K.

Item Type:Articles
Additional Information:Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 104(16):162101 2014 and may be found at
Glasgow Author(s) Enlighten ID:Millar, Dr Ross and Leadley, Dr David and MacLaren, Dr Ian and Paul, Professor Douglas and Dumas, Dr Derek and Gallacher, Dr Kevin
Authors: Dumas, D.C.S., Gallacher, K., Millar, R., MacLaren, I., Myronov, M., Leadley, D.R., and Paul, D.J.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Research Group:Semiconductor Devices
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN (Online):1077-3118
Copyright Holders:Copyright © 2014 AIP Publishing LLC
First Published:First published in Applied Physics Letters 104(16):162101
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

University Staff: Request a correction | Enlighten Editors: Update this record

Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
523621Room Temperature Terahertz Quantum Cascade Lasers on Silicon SubstratesDouglas PaulEngineering & Physical Sciences Research Council (EPSRC)EP/H02364X/1ENG - ENGINEERING ELECTRONICS & NANO ENG