Younis, U., Holmes, B. and Hutchings, D. (2014) Characterization and optimization of ion implantation for high spatial resolution quantum well intermixing in GaAs/AlGaAs superlattices. European Physical Journal: Applied Physics, 66(1), 10101-p1. (doi: 10.1051/epjap/2014140020)
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Abstract
Processes to achieve high spatial resolution ion implantation induced quantum well intermixing in GaAs/AlGaAs superlattices have been developed. Ion implantation has been carried out using various doses of 4 MeV As2+ ion beam, followed by rapid thermal annealing at various temperatures for 60 s. Low temperature photoluminescence measurements reveal a blue-shift up to 90 nm in the energy band-gap. Propagation losses have been characterized in the intermixed waveguides, and losses as low as 0.55 cm−1 have been observed for 0.5×1013 cm−2 implantation dose which gives a blue-shift of 68 nm when annealed at 775◦C. The spatial resolution of ∼1.2 μm has been observed at the depth of 2 μm inside the epitaxial structure.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Younis, Mr Usman and Hutchings, Professor David and Holmes, Dr Barry |
| Authors: | Younis, U., Holmes, B., and Hutchings, D. |
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | European Physical Journal: Applied Physics |
| ISSN: | 1286-0042 |
| ISSN (Online): | 1286-0050 |
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