Velha, P., Dumas, D. C., Gallacher, K. , Millar, R. , Myronov, M., Leadley, D. R. and Paul, D. J. (2013) Strained Germanium Nanostructures on Silicon Emitting at >2.2 µm Wavelength. In: 2013 IEEE 10th International Conference on Group IV Photonics (GFP), Seoul, South Korea, 23-30 Aug 2013, pp. 142-143. ISBN 9781467358040 (doi: 10.1109/Group4.2013.6644411)
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Abstract
The photoluminescence of process-induced tensile strained nanostructures fabricated using Ge on Si is reported. 100 nm pillars were etched and embedded in a silicon nitride thin film demonstrating photoluminescence emission up to ~2.5 μm.
Item Type: | Conference Proceedings |
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Keywords: | Elemental semiconductors, etching, germanium, nanostructured materials, photoluminescence, silicon compounds, thin films, Ge-Si3N4, Si, etching, photoluminescence emission, process-induced tensile strained germanium nanostructures, silicon nitride thin film, size 100 nm, Laser excitation, optical device fabrication, photonic band gap, pump lasers, silicon, tensile strain |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Millar, Dr Ross and Leadley, Dr David and Velha, Mr Philippe and Paul, Professor Douglas and Dumas, Dr Derek and Gallacher, Dr Kevin |
Authors: | Velha, P., Dumas, D. C., Gallacher, K., Millar, R., Myronov, M., Leadley, D. R., and Paul, D. J. |
Subjects: | T Technology > T Technology (General) |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Semiconductor Devices |
ISSN: | 1949-2081 |
ISBN: | 9781467358040 |
Published Online: | 24 October 2013 |
Copyright Holders: | Copyright © 2013 IEEE |
First Published: | First published in 2013 IEEE 10th International Conference on Group IV Photonics (GFP): 142-143 |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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