Tuning the electroluminescence of n-Ge LEDs using process induced strain

Velha, P., Gallacher, K., Dumas, D., Paul, D.J. , Myronov, M. and Leadley, D.R. (2012) Tuning the electroluminescence of n-Ge LEDs using process induced strain. In: 2012 IEEE 9th International Conference on Group IV Photonics (GFP), San Diego, CA, 23-31 Aug 2012, pp. 337-339. (doi: 10.1109/GROUP4.2012.6324179)

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Publisher's URL: http://dx.doi.org/10.1109/GROUP4.2012.6324179


LEDs are reported from Ge-on-Si in which process induced strain has increased the emission wavelength. The direct bandgap electroluminescence emits up to ~ μW of power between 1.6 μm and ~1.8 μm, significantly larger than previous LEDs.

Item Type:Conference Proceedings
Keywords:electroluminescence;elemental semiconductors;energy gap;germanium;light emitting diodes;optical tuning;Ge-Si;Ge-on-Si;LED;direct bandgap electroluminescence;emission wavelength;process induced strain;Current density;Energy measurement;Light emitting diodes;Optical wavelength conversion;Silicon;Strain;Wires
Glasgow Author(s) Enlighten ID:Leadley, Dr David and Velha, Mr Philippe and Paul, Professor Douglas and Dumas, Dr Derek and Gallacher, Dr Kevin
Authors: Velha, P., Gallacher, K., Dumas, D., Paul, D.J., Myronov, M., and Leadley, D.R.
Subjects:T Technology > T Technology (General)
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
523621Room Temperature Terahertz Quantum Cascade Lasers on Silicon SubstratesDouglas PaulEngineering & Physical Sciences Research Council (EPSRC)EP/H02364X/1ENG - ENGINEERING ELECTRONICS & NANO ENG