Intermite, G. et al. (2013) Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths. In: IEEE 10th International Conference on Group IV Photonics, Seoul, South Korea, 28-30 Aug 2013, pp. 132-133. (doi: 10.1109/Group4.2013.6644406)
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Abstract
Ge-on-Si single-photon detectors are fabricated and characterized at 1310 and 1550 nm. 4 % single-photon detection efficiency is observed at 1310 nm demonstrating the lowest reported noise equivalent power for Ge-on-Si single-photon detectors (1x10-14 WHz-1/2).
| Item Type: | Conference Proceedings |
|---|---|
| Additional Information: | ISBN: 9781467358033 |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Gallacher, Dr Kevin |
| Authors: | Intermite, G., Warburton, R.E., Myronov, M., Allred, P., Leadley, D.R., Gallacher, K., Paul, D.J., Pilgrim, N., Lever, L.J.M., Ikonic, Z., Kelsall, R.W., and Buller, G.S. |
| Subjects: | T Technology > T Technology (General) |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Research Group: | Semiconductor Devices |
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