Gallacher, K. , Velha, P., Paul, D. , Frigerio, J., Chrastina, D. and Isella, G. (2012) 1.55 um electroluminescence from strained n-Ge quantum wells on silicon substrates. In: 2012 IEEE 9th International Conference on Group IV Photonics (GFP), San Diego, CA, 23-31 Aug 2012, (doi: 10.1109/GROUP4.2012.6324093)
Full text not currently available from Enlighten.
Publisher's URL: http://dx.doi.org/10.1109/GROUP4.2012.6324093
Abstract
Electroluminescence from strained n-Ge quantum wells LEDs on Si0.05Ge0.95 are demonstrated. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to transitions between the direct and indirect transitions respectively.
Item Type: | Conference Proceedings |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Velha, Mr Philippe and Paul, Professor Douglas and Gallacher, Dr Kevin |
Authors: | Gallacher, K., Velha, P., Paul, D., Frigerio, J., Chrastina, D., and Isella, G. |
Subjects: | T Technology > T Technology (General) |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE 9th International Conference on Group IV Photonics |
University Staff: Request a correction | Enlighten Editors: Update this record