Wang, X., Cheng, B., Brown, A. R., Millar, C., Kuang, J. B., Nassif, S. and Asenov, A. (2013) Statistical variability and reliability and the impact on corresponding 6T-SRAM cell design for a 14-nm node SOI FinFET technology. IEEE Design and Test, 30(6), pp. 18-28. (doi: 10.1109/MDAT.2013.2266395)
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Publisher's URL: http://dx.doi.org/10.1109/MDAT.2013.2266395
Abstract
This paper presents an evaluation of 14-nm SOI FinFET CMOS SRAM codesign techniques in the presence of statistical variability and reliability impact. As statistical variability sources random discrete dopants, gate-edge roughness, fi-edge roughness, metal-gate granularity and random interface trapped charges in N/PBTI are considered.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Millar, Dr Campbell and Brown, Mr Andrew and Cheng, Dr Binjie and Wang, Dr Xingsheng and Asenov, Professor Asen |
| Authors: | Wang, X., Cheng, B., Brown, A. R., Millar, C., Kuang, J. B., Nassif, S., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Design and Test |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 2168-2356 |
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