Stewart, A.G., Cherkaoui, K., Hall, R.S. and Crowder, J.G. (2004) Deep level transient spectroscopy measurements on heterostructure InSb/InAlSb diodes. Semiconductor Science and Technology, 19(3), pp. 468-471. (doi: 10.1088/0268-1242/19/3/031)
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Abstract
Deep level transient spectroscopy (DLTS) measurements have been conducted on MBE-grown heterostructure InSb/In1−xAlxSb diodes. The measurements were conducted in the temperature range 10–130 K and two majority carrier (electron) traps, labelled E1 and E2, have been observed. A trap signature has been produced from the DLTS spectra for both traps. The activation energies determined from Arrhenius plots of the peak temperatures as a function of rate window for E1 and E2 were 17 meV and 79 meV, respectively. The apparent capture cross-sections and concentrations for E1 and E2 have also been measured.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Stewart, Dr Andrew |
| Authors: | Stewart, A.G., Cherkaoui, K., Hall, R.S., and Crowder, J.G. |
| Subjects: | Q Science > QC Physics |
| College/School: | College of Science and Engineering > School of Physics and Astronomy |
| Journal Name: | Semiconductor Science and Technology |
| ISSN: | 0268-1242 |
| ISSN (Online): | 1361-6641 |
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