Ignatova, O. et al. (2013) Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs. In: 44th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 5-7 Dec 2013, pp. 167-168.
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Publisher's URL: http://www.ieeesisc.org/programs/2013_SISC_technical_program.pdf
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Mirza, Dr Muhammad M A and Thayne, Prof Iain and Peralagu, Mr Uthayasankaran and Steer, Dr Matthew and Li, Dr Xu and Ignatova, Dr Olesya |
Authors: | Ignatova, O., Peralagu, U., Li, X., Steer, M., Mirza, M., Lin, J., Povey, I., Carolan, P., Cherkaoui, K., Hurley, P., and Thayne, I. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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