Investigation of the RTN Distribution of nanoscale MOS devices from subthreshold to on-state

Amoroso, S.M., Compagnoni, C.M., Ghetti, A., Gerrer, L., Spinelli, A.S., Lacaita, A.L. and Asenov, A. (2013) Investigation of the RTN Distribution of nanoscale MOS devices from subthreshold to on-state. IEEE Electron Device Letters, 34(5), pp. 683-685. (doi: 10.1109/LED.2013.2250477)

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Abstract

This letter presents a numerical investigation of the statistical distribution of the random telegraph noise (RTN) amplitude in nanoscale MOS devices, focusing on the change of its main features when moving from the subthreshold to the on-state conduction regime. Results show that while the distribution can be well approximated by an exponential behavior in subthreshold, large deviations from this behavior appear when moving toward the on-state regime, despite a low probability exponential tail at high RTN amplitudes being preserved. The average value of the distribution is shown to keep an inverse proportionality to channel area, while the slope of the high-amplitude exponential tail changes its dependence on device width, length, and doping when moving from subthreshold to on-state.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Gerrer, Dr Louis and Amoroso, Dr Salvatore and Asenov, Professor Asen
Authors: Amoroso, S.M., Compagnoni, C.M., Ghetti, A., Gerrer, L., Spinelli, A.S., Lacaita, A.L., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0741-3106
Copyright Holders:Copyright © 2013 IEEE
First Published:First published in IEEE Electron Device Letters 34(5):683-685
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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