Peralagu, U. , Holland, M.C., Paterson, G.W. and Thayne, I.G. (2010) Strain additivity and its impact on the hole mobility of InxGa1-xAs channels for III-V pMOSFETs. In: 19th European Workshop on Heterostructure Technology, Crete, Greece, 18-20 Oct 2010,
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Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Paterson, Dr Gary and Peralagu, Mr Uthayasankaran |
Authors: | Peralagu, U., Holland, M.C., Paterson, G.W., and Thayne, I.G. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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