Wang, X., Brown, A., Cheng, B. and Asenov, A. (2012) RTS amplitude distribution in 20nm SOI finFETs subject to statistical variability. In: SISPAD: International Conference on Semiconductor Process and Device Simulations, Denver, CO, USA, 5-7 Sep 2012, pp. 296-299.
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Publisher's URL: http://dx.doi.org/10.1109/SNW.2012.6243347
Abstract
We present a comprehensive simulation study of random telegraph signal (RTS) amplitude distributions under the influence of statistical variability in 20nm gate-length, lightly-doped channel FinFETs on an SOI substrate. The distribution of threshold voltage RTS shifts, due to single-charge trapping at the interface, is inherently affected by statistical variability sources including random discrete dopants (RDD), gate- and fin- edge roughness (GER and FER), and metal gate granularity (MGG). The threshold voltage RTS amplitudes in SOI FinFETs deviate from an exponential distribution with a reduced tail, but it increases with increased statistical variability. Moreover, the electrical transfer characteristics due to single charge trapping vary with gate-bias.
| Item Type: | Conference Proceedings |
|---|---|
| Additional Information: | ISBN: 9781467309967 |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Brown, Mr Andrew and Cheng, Dr Binjie and Wang, Dr Xingsheng and Asenov, Professor Asen |
| Authors: | Wang, X., Brown, A., Cheng, B., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Research Group: | Device Modelling Group |
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