Impact of precisely positioned dopants on the performance of an ultimate silicon nanowire transistor: a full three-dimensional NEGF simulation study

Georgiev, V.P. , Towie, E.A. and Asenov, A. (2013) Impact of precisely positioned dopants on the performance of an ultimate silicon nanowire transistor: a full three-dimensional NEGF simulation study. IEEE Transactions on Electron Devices, 60(3), pp. 965-971. (doi: 10.1109/TED.2013.2238944)

Abstract

In this paper, we report the first systematic study of quantum transport simulation of the impact of precisely positioned dopants on the performance of ultimately scaled gate-all-around silicon nanowire transistors (NWTs) designed for digital circuit applications. Due to strong inhomogeneity of the selfconsistent electrostatic potential, a full 3-D real-space nonequilibrium Green function formalism is used. The simulations are carried out for an n-channel NWT with 2.2 × 2.2 nm2 cross section and 6-nm channel length, where the locations of the precisely arranged dopants in the source-drain extensions and in the channel region have been varied. The individual dopants act as localized scatters, and hence, impact of the electron transport is directly correlated to the position of the single dopants. As a result, a large variation in the ON-current and a modest variation of the subthreshold slope are observed in the ID-VG characteristics when comparing devices with microscopically different discrete dopant configurations. The variations of the current-voltage characteristics are analyzed with reference to the behavior of the transmission coefficients.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Towie, Dr Ewan and Georgiev, Professor Vihar and Asenov, Professor Asen
• Authors: Georgiev, V.P., Towie, E.A., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Transactions on Electron Devices
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 0018-9383
• Copyright Holders: Copyright © 2013 IEEE
• First Published: First published in IEEE Transactions on Electron Devices 60(3):965-971
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher.