InGaAs implant-free quantum-well MOSFETs: performance evaluation using 3D Monte Carlo simulation

Towie, E., Liao, S.-Y., Riddet, C. and Asenov, A. (2012) InGaAs implant-free quantum-well MOSFETs: performance evaluation using 3D Monte Carlo simulation. In: Intel European Research and Innovation Conference, Dublin, Ireland, 3-5 Oct 2012,

Abstract

In this paper we use numerical simulations to evaluate the performance of III-V Implant-Free Quantum-Well (IFQW) MOSFET devices that offer simultaneously high channel mobility, high drive current and excellent electrostatic integrity. Using 3D Monte Carlo simulations we show that to fully understand the performance of this device architecture, Fermi-Dirac statistics and quantum-corrections must be considered to account for the impact of low density-of-states and quantum confinement in the channel layer respectively.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: No
• Glasgow Author(s) Enlighten ID: Towie, Dr Ewan and Liao, Dr Si-Yu and Asenov, Professor Asen and Riddet, Mr Craig
• Authors: Towie, E., Liao, S.-Y., Riddet, C., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Copyright Holders: Copyright © 2012 The Author
• Publisher Policy: Reproduced with the permission of the Author