Geometry dependence of the energy levels in silicon isolated double quantum-dots

Tanner, M.G., Emiroglu, E.G., Hasko, D.G. and Williams, D.A. (2005) Geometry dependence of the energy levels in silicon isolated double quantum-dots. Microelectronic Engineering, 78-79, pp. 195-200. (doi: 10.1016/j.mee.2005.01.001)

Abstract

We present the fabrication and low-temperature electron transport measurements of circuits consisting of a single-island single-electron transistor monitoring an isolated double quantum-dot for a range of devices with different double quantum-dot geometries. Devices are fabricated in highly doped silicon-on-insulator, using electron beam lithography and reactive ion etching resulting in ‘trench isolated’ circuit elements that are capacitively coupled. We observe polarization of the isolated double quantum-dots as a function of the side gate potentials through changes in the single-electron transistor conduction characteristics. Polarization characteristics are seen to vary systematically with double quantum-dot geometry, which is attributed to the energy level structure of the isolated double quantum dot.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Tanner, Dr Michael
• Authors: Tanner, M.G., Emiroglu, E.G., Hasko, D.G., and Williams, D.A.
• Subjects: Q Science > QC Physics
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Microelectronic Engineering
• ISSN: 0167-9317
• Published Online: 18 January 2005