Tanner, M.G., Hasko, D.G. and Williams, D.A. (2006) Investigation of silicon isolated double quantum-dot energy levels for quantum computation. Microelectronic Engineering, 83(4-9), pp. 1818-1822. (doi: 10.1016/j.mee.2006.01.174)
Full text not currently available from Enlighten.
Abstract
The fabrication methods and low-temperature electron transport measurements are presented for circuits consisting of a single-island single-electron transistor coupled to an isolated double quantum-dot. Capacitively coupled ‘trench isolated’ circuit elements are fabricated in highly doped silicon-on-insulator using electron beam lithography and reactive ion etching. Polarisation of the isolated double quantum-dot is observed as a function of the side gate potentials through changes in the conductance characteristics of the single-electron transistor. Microwave signals are coupled into the device for excitation of the polarisation states of the isolated double quantum-dot. Resonances attributed to an energy level splitting of the polarisation states are observed with an energy separation appropriate for quantum computation.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Tanner, Dr Michael |
| Authors: | Tanner, M.G., Hasko, D.G., and Williams, D.A. |
| Subjects: | Q Science > QC Physics |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Microelectronic Engineering |
| ISSN: | 0167-9317 |
| Published Online: | 21 February 2006 |
University Staff: Request a correction | Enlighten Editors: Update this record
Altmetric
Altmetric