Fine and large coulomb diamonds in a silicon quantum dot

Kodera, T., Ferrus, T., Nakaoka, T., Podd, G., Tanner, M.G., Williams, D. and Arakawa, Y. (2009) Fine and large coulomb diamonds in a silicon quantum dot. Japanese Journal of Applied Physics, 48(6), 06FF15. (doi: 10.1143/JJAP.48.06FF15)

Abstract

We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal–oxide–semiconductor (LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Tanner, Dr Michael
• Authors: Kodera, T., Ferrus, T., Nakaoka, T., Podd, G., Tanner, M.G., Williams, D., and Arakawa, Y.
• Subjects: Q Science > QC Physics
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Japanese Journal of Applied Physics
• ISSN: 0021-4922
• ISSN (Online): 1347-4065