Hou, L. , Haji, M. and Marsh, J. (2013) Monolithic mode-locked laser with integrated optical amplifier for low noise and high power operation. IEEE Journal of Selected Topics in Quantum Electronics, 19(4), p. 1100808. (doi: 10.1109/JSTQE.2013.2238508)
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Abstract
High power 40 GHz 1.55 Êm passively mode-locked surface-etched DBR lasers monolithically integrated with semiconductor optical amplifiers (SOA) are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum-well active layer and far-field reduction layer. The device produces near transform limited sech2 pulses with the shortest measured pulse duration at 3.19 ps, and the narrowest measured radio frequency linewidth at 110 kHz. The highest average output power at ∼155 mW with a peak power of > 0.6 W was attained from the SOA-end facet while mode-locked. The beam divergences from the SOA side were narrow and symmetric (26.7 ∼ 26.8), which is highly desirable for butt-coupling to a single mode fibre.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Marsh, Professor John and Hou, Dr Lianping and Haji, Dr Mohsin |
Authors: | Hou, L., Haji, M., and Marsh, J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Journal of Selected Topics in Quantum Electronics |
ISSN: | 1077-260X |
ISSN (Online): | 1558-4542 |
Published Online: | 09 January 2013 |
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