Monolithic mode-locked laser with integrated optical amplifier for low noise and high power operation

Hou, L. , Haji, M. and Marsh, J. (2013) Monolithic mode-locked laser with integrated optical amplifier for low noise and high power operation. IEEE Journal of Selected Topics in Quantum Electronics, 19(4), p. 1100808. (doi: 10.1109/JSTQE.2013.2238508)

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Abstract

High power 40 GHz 1.55 Êm passively mode-locked surface-etched DBR lasers monolithically integrated with semiconductor optical amplifiers (SOA) are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum-well active layer and far-field reduction layer. The device produces near transform limited sech2 pulses with the shortest measured pulse duration at 3.19 ps, and the narrowest measured radio frequency linewidth at 110 kHz. The highest average output power at ∼155 mW with a peak power of > 0.6 W was attained from the SOA-end facet while mode-locked. The beam divergences from the SOA side were narrow and symmetric (26.7 ∼ 26.8), which is highly desirable for butt-coupling to a single mode fibre.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and Hou, Dr Lianping and Haji, Dr Mohsin
Authors: Hou, L., Haji, M., and Marsh, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Journal of Selected Topics in Quantum Electronics
ISSN:1077-260X
ISSN (Online):1558-4542
Published Online:09 January 2013

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