Rowe, M.A., Gansen, E.J., Greene, M., Hadfield, R.H. , Harvey, T.E., Su, M.Y., Nam, S.W., Mirin, R.P. and Rosenberg, D. (2006) Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency. Applied Physics Letters, 89(25), p. 253505. (doi: 10.1063/1.2403907)
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Abstract
We investigate the operation of a quantum dot, optically gated, field-effect transistor as a photon detector. The detector exhibits time-gated, single-shot, single-photon sensitivity, a linear response, and an internal quantum efficiency of up to (68±18)% at 4 K. Given the noise of the detector system, they find that a particular discriminator level can be chosen so the device operates with an internal quantum efficiency of (53±11)% and dark counts of 0.003 counts per shot.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Hadfield, Professor Robert |
Authors: | Rowe, M.A., Gansen, E.J., Greene, M., Hadfield, R.H., Harvey, T.E., Su, M.Y., Nam, S.W., Mirin, R.P., and Rosenberg, D. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Applied Physics Letters |
ISSN: | 0003-6951 |
Published Online: | 19 December 2006 |
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