Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency

Rowe, M.A., Gansen, E.J., Greene, M., Hadfield, R.H. , Harvey, T.E., Su, M.Y., Nam, S.W., Mirin, R.P. and Rosenberg, D. (2006) Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency. Applied Physics Letters, 89(25), p. 253505. (doi:10.1063/1.2403907)

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Abstract

We investigate the operation of a quantum dot, optically gated, field-effect transistor as a photon detector. The detector exhibits time-gated, single-shot, single-photon sensitivity, a linear response, and an internal quantum efficiency of up to (68±18)% at 4 K. Given the noise of the detector system, they find that a particular discriminator level can be chosen so the device operates with an internal quantum efficiency of (53±11)% and dark counts of 0.003 counts per shot.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hadfield, Professor Robert
Authors: Rowe, M.A., Gansen, E.J., Greene, M., Hadfield, R.H., Harvey, T.E., Su, M.Y., Nam, S.W., Mirin, R.P., and Rosenberg, D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
ISSN:0003-6951
Published Online:19 December 2006

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