Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection

Rowe, M.A., Gansen, E.J., Greene, M.B., Rosenberg, D., Harvey, T.E., Su, M.Y., Hadfield, R.H. , Nam, S.W. and Mirin, R.P. (2008) Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26(3), p. 1174. (doi:10.1116/1.2837839)

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Abstract

We describe the design of the epitaxial layers for an efficient, photon-number-determining detector that utilizes a layer of self-assembled quantum dots as an optically addressable gate in a field-effect transistor. Our design features a dedicated absorption layer where photoexcited holes are produced and directed with tailored electric fields to the quantum dot layer. A barrier layer ensures that the quantum dot layer is located at a two-dimensional potential minimum of the structure for the efficient collection of holes. Using quantum dots as charge traps allows us to contain the photoexcited holes in a well-defined plane. We derive an equation for a uniform size of the photon signal based on this precise geometry. Finally, we show corroborating data with well-resolved signals corresponding to different numbers of photons.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hadfield, Professor Robert
Authors: Rowe, M.A., Gansen, E.J., Greene, M.B., Rosenberg, D., Harvey, T.E., Su, M.Y., Hadfield, R.H., Nam, S.W., and Mirin, R.P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN:1071-1023
ISSN (Online):1520-8567
Published Online:30 May 2008

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