Gigahertz bandwidth electrical control over a dark exciton-based memory bit in a single quantum dot

McFarlane, J., Dalgarno, P.A., Gerardot, B.D., Hadfield, R.H. , Warburton, R.J., Karrai, K., Badolato, A. and Petroff, P.M. (2009) Gigahertz bandwidth electrical control over a dark exciton-based memory bit in a single quantum dot. Applied Physics Letters, 94(9), 093113. (doi:10.1063/1.3086461)

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Abstract

An optical write-store-read process is demonstrated in a single InGaAs quantum dot within a charge-tunable device. A single dark exciton is created by nongeminate optical excitation allowing a dark exciton-based memory bit to be stored for over ∼ 1 μs. Read-out is performed with a gigahertz bandwidth electrical pulse, forcing an electron spin-flip followed by recombination as a bright neutral exciton, or by charging with an additional electron followed by a recombination as a negative trion. These processes have been used to determine accurately the dark exciton spin-flip lifetime as it varies with static electric field.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hadfield, Professor Robert
Authors: McFarlane, J., Dalgarno, P.A., Gerardot, B.D., Hadfield, R.H., Warburton, R.J., Karrai, K., Badolato, A., and Petroff, P.M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
ISSN:0003-6951
Published Online:06 March 2009

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