Chen, Q., Das, D., Chitnis, D., Walls, K., Drysdale, T.D., Collins, S. and Cumming, D.R.S. (2012) A CMOS image sensor integrated with plasmonic colour filters. Plasmonics, 7(4), pp. 695-699. (doi: 10.1007/s11468-012-9360-6)
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Abstract
Multi-pixel, 4.5 × 9 μm, plasmonic colour filters, consisting of periodic subwavelength holes in an aluminium film, were directly integrated on the top surface of a complementary metal oxide semiconductor (CMOS) image sensor (CIS) using electron beam lithography and dry etch. The 100 × 100-pixel plasmonic CIS showed full colour sensitivities across the visible range determined by a photocurrent measurement. The filters were fabricated in a simple process utilising a single lithography step. This is to be compared with the traditional multi-step processing when using dye-doped polymers. The intrinsic compatibility of these plasmonic components with a standard CMOS process allows them to be manufactured in a metal layer close to the photodiodes. The incorporation of such plasmonic components may in the future enable the development of advanced CIS with low cost, low cross-talk and increased functionality.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Cumming, Professor David and Drysdale, Dr Timothy and Chen, Dr Qin |
Authors: | Chen, Q., Das, D., Chitnis, D., Walls, K., Drysdale, T.D., Collins, S., and Cumming, D.R.S. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Plasmonics |
Publisher: | Springer New York LLC |
ISSN: | 1557-1955 |
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