Gallacher, K. , Velha, P., Paul, D. , Cecchi, S., Frigerio, J., Chrastina, D. and Isella, G. (2012) 1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates. Applied Physics Letters, 101(21), p. 211101. (doi: 10.1063/1.4767138)
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Abstract
Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substrate are demonstrated at room temperature. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to recombination between the direct and indirect transitions, respectively. The emission wavelength can be tuned by around 4% through changing the current density through the device. The devices have potential applications in the fields of optical interconnects, gas sensing, and healthcare.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Gallacher, Dr Kevin |
Authors: | Gallacher, K., Velha, P., Paul, D., Cecchi, S., Frigerio, J., Chrastina, D., and Isella, G. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Applied Physics Letters |
Journal Abbr.: | Appl. Phys. Lett. |
ISSN: | 0003-6951 |
ISSN (Online): | 1077-3118 |
Published Online: | 19 November 2012 |
Copyright Holders: | Copyright © 2012 American Institute of Physics |
First Published: | First published in Applied Physics Letters 101(21):211101 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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