Long wavelength > 1.9 um germanium for optoelectronics using process induced strain

Velha, P., Gallacher, K. , Dumas, D., Paul, D. , Myronov, M. and Leadley, D.R. (2012) Long wavelength > 1.9 um germanium for optoelectronics using process induced strain. ECS Transactions, 50(9), pp. 779-782.

Abstract

The photoluminescence of tensile strained germanium nanostructures is reported. Sub-micron gratings and pillars were fabricated before being embedded in strained silicon nitride films. Using different deposition conditions and different sizes of structures, the stress in the nanostructures can be controlled. The measured optical properties of the samples show that the direct band-gap is shifted drastically towards higher wavelength to over 1.9 μm wavelength. This process of local control of the stress in germanium nanostructures is compatible with integrated photonic devices in waveguides geometry. This work opens the route towards emitters and photo-detectors above 1.6 μm wavelength integrated on silicon substrates which are not presently available.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Paul, Professor Douglas and Gallacher, Dr Kevin
• Authors: Velha, P., Gallacher, K., Dumas, D., Paul, D., Myronov, M., and Leadley, D.R.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: ECS Transactions
• ISSN: 1938-5862