Khalid, A. , Li, C. and Cumming, D. (2010) Vertical scaling of multi-stack Planar Gunn diodes. 2010 International Semiconductor Conference (CAS), 2, pp. 427-430. (doi: 10.1109/SMICND.2010.5650562)
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Abstract
Planar Gunn diodes have been scaled vertically through combining multiple active epilayer stacks present in previously successful GaAs/AlGaAs devices. Comparison of results from fabricated devices with those simulated using a Monte Carlo approach suggest that while current and power output rises in such scaled designs, this is limited by significant heating which results in sub-linear scaling with the number of stacks. The presence of additional current-limiting mechanisms, such as inactive stacks, are implied if considering the higher currents produced by un-scaled designs or scaled devices at below peak temperatures.
| Item Type: | Articles |
|---|---|
| Additional Information: | First presented as a paper at the International Semiconductor Conference (CAS), 11-13 Oct 2010, Sinaia, Romania |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Li, Professor Chong and Cumming, Professor David and Khalid, Dr Ata-Ul-Habib |
| Authors: | Khalid, A., Li, C., and Cumming, D. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Research Group: | MicroSystem Technology |
| Journal Name: | 2010 International Semiconductor Conference (CAS) |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 1545-827X |
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