Charge dissipation layer optimisation for nano-scale electron-beam lithography pattern definition onto diamond

Greer, A.I.M. and Moran, D.A.J. (2012) Charge dissipation layer optimisation for nano-scale electron-beam lithography pattern definition onto diamond. Diamond and Related Materials, 29, pp. 13-17. (doi: 10.1016/j.diamond.2012.07.003)

Full text not currently available from Enlighten.


This paper demonstrates that the pattern feature size achieved for electron beam lithography (EBL) on diamond substrates can be minimised through optimisation of the thickness of a surface deposited metallic discharge layer. The purpose and benefits of a charge dissipation layer are presented and the subsequent trade-off with feature size examined. 5 nm of Al is demonstrated to be the optimum thickness of charge dissipation layer for polymethyl methacrylate (PMMA) resist on polycrystalline diamond as the feature size retains a similar variance to thicker layers, has good reproducibility and ultimately produces the smallest feature sizes. PMMA can be used as either a metal deposition mask, or an etch mask for SiO<sub>2</sub> which in turn can be used as an etch mask for diamond. Using this process we have demonstrated pattern transfer and metallisation of features onto diamond and SiO<sub>2</sub> coated diamond down to a dimension of 20 nm.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Greer, Mr Andrew and Moran, Professor David
Authors: Greer, A.I.M., and Moran, D.A.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Medical Veterinary and Life Sciences > School of Biodiversity, One Health & Veterinary Medicine
Research Group:Nanoelectronic Diamond Devices and Systems
Journal Name:Diamond and Related Materials

University Staff: Request a correction | Enlighten Editors: Update this record

Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
450861Ultra short gate length diamond FETs for high power/high frequency applicationsDavid MoranEngineering & Physical Sciences Research Council (EPSRC)EP/E054668/1ENG - ENGINEERING ELECTRONICS & NANO ENG