Russell, S., Sharabi, S., Tallaire, A. and Moran, D. (2012) Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz. IEEE Electron Device Letters, 33(10), pp. 1471-1473. (doi: 10.1109/LED.2012.2210020)
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Publisher's URL: http://dx.doi.org/10.1109/LED.2012.2210020
Abstract
Homoepitaxial diamond has been used to demonstrate the RF performance of 50-nm gate length hydrogen-terminated diamond field-effect transistors. An extrinsic cutoff frequency of 53 GHz is achieved which we believe to be the highest value reported for a diamond-based transistor. The generation of an RF small signal equivalent circuit is used to extract device elements to better understand variation between intrinsic and extrinsic operation. An intrinsic cutoff frequency of 90 GHz is extracted through this process, verifying the requirement to minimize access resistance to maximize the potential high-frequency performance of this technology.
| Item Type: | Articles (Letter) |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sharabi, Mr Salah and Russell, Dr Stephen and Moran, Professor David |
| Authors: | Russell, S., Sharabi, S., Tallaire, A., and Moran, D. |
| College/School: | College of Science and Engineering > School of Chemistry College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Research Group: | Nanoelectronic Diamond Devices and Systems |
| Journal Name: | IEEE Electron Device Letters |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 0741-3106 |
| ISSN (Online): | 1558-0563 |
| Published Online: | 30 August 2012 |
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