Silicon-on-insulator photonic crystal miniature devices with slow light enhanced third-order nonlinearities

Rawal, S., Sinha, R.K. and De La Rue, R.M. (2012) Silicon-on-insulator photonic crystal miniature devices with slow light enhanced third-order nonlinearities. Journal of Nanophotonics, 6(1), 063504. (doi:10.1117/1.JNP.6.063504)

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The effects of the slow-down factor on third-order nonlinear effects in silicon-on-insulator photonic crystal channel waveguides were investigated. In the slow light regime, with a group index equal to 99, these nonlinear effects are enhanced but the enhancement produced depends on the input peak power level. Simulations indicate the possibility of soliton-like propagation of 1 ps pulses at an input peak power level of 50 mW inside such a photonic crystal waveguide. The increase in the induced phase shift produced by lower group velocities can be used to decrease the size and power requirements needed to operate devices such as optical switches, logic gates, and wavelength translators.

Item Type:Articles
Additional Information:Copyright 2012 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Glasgow Author(s) Enlighten ID:De La Rue, Professor Richard
Authors: Rawal, S., Sinha, R.K., and De La Rue, R.M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Nanophotonics
Published Online:12 March 2012
Copyright Holders:Copyright © 2012 SPIE
First Published:First published in Journal of Nanophotonics 6(1):063504
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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