160-GHz 1.55- µm colliding-pulse mode-locked AlGaInAs/InP laser with high power and low divergence angle

Hou, L. , Haji, M., Akbar, J., Bryce, A.C. and Marsh, J. (2012) 160-GHz 1.55- µm colliding-pulse mode-locked AlGaInAs/InP laser with high power and low divergence angle. IEEE Photonics Technology Letters, 24(12), pp. 1057-1059. (doi: 10.1109/LPT.2012.2194779)

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Publisher's URL: http://dx.doi.org/10.1109/LPT.2012.2194779

Abstract

A monolithic ~1.55-μm colliding-pulse mode-locked AlGaInAs/InP laser with a three-quantum-well active layer incorporating a passive far-held reduction layer has been demonstrated. The device emits pulses at 162 GHz, with a pulsewidth of 0.98 ps, a pulse energy of 0.13 pJ, and a time-bandwidth product of 0.52, while demonstrating a low divergence angle (12.7° × 26.3°) with a twofold improvement in butt coupling efficiency to a flat cleaved single-mode fiber, compared to the conventional mode-locked lasers.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and Bryce, Prof Ann and Hou, Dr Lianping and Haji, Dr Mohsin
Authors: Hou, L., Haji, M., Akbar, J., Bryce, A.C., and Marsh, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
ISSN:1041-1135

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