Hou, L. , Haji, M., Li, C. , Akbar, J., Marsh, J.H. and Bryce, A.C. (2011) 80-GHz AlGaInAs/InP 1.55 mu m colliding-pulse mode-locked laser with low divergence angle and timing jitter. In: Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, Munich, Germany, 22-26 May 2011, (doi: 10.1109/CLEOE.2011.5942606)
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Publisher's URL: http://dx.doi.org/10.1109/CLEOE.2011.5942606
Abstract
In this paper we report a new epitaxial laser wafer design and the performance of an 80-GHz AlGalnAs/InP λ~l .55 μm CPM laser with a low divergence angle and timing jitter. Based on a standard epi-wafer, an additional thin layer (160-nm-thick 1.1Q), hereafter referred to as the far-field reduction layer (FRL), was inserted in the lower n-cladding layer with a 750-nm-thick InP spacer between the active layer and FRL. This design increases the spot size and reduces the internal loss of the cavity, while suppressing higher transverse mode lasing.
Item Type: | Conference Proceedings |
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Additional Information: | CB12.2 oral presentation |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Li, Professor Chong and Marsh, Professor John and Bryce, Prof Ann and Hou, Dr Lianping and Haji, Dr Mohsin |
Authors: | Hou, L., Haji, M., Li, C., Akbar, J., Marsh, J.H., and Bryce, A.C. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Laser Physics Letters |
ISSN: | 1612-2011 |
ISSN (Online): | 1612-202X |
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