Ferrari, G., Watling, J.R., Roy, S., Barker, J.R. and Asenov, A. (2007) Beyond SiO2 technology: simulation of the impact of high-κ dielectrics on mobility. Journal of Non-Crystalline Solids, 353(5-7), pp. 630-634. (doi: 10.1016/j.jnoncrysol.2006.10.044)
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Abstract
A critical challenge for the microelectronics industry is the need for higher permittivity dielectrics to replace silicon dioxide. A number of different high-<sub>κ</sub> materials have been proposed and analyzed as SiO<sub>2</sub> replacements in the next generation of MOSFETs. High-<sub>κ</sub> materials allow the use of a thicker gate dielectric, maintaining the gate capacitance with reduced gate leakage. However they all lead to mobility degradation due to, among other factors, the coupling of carriers to surface soft-optical (SO) phonons. A severe mobility degradation in the presence of high-κ becomes evident when comparing the vertical field dependence of mobility for a wide range of high-κ materials against SiO<sub>2</sub>. As oxides containing Hf presently appears to be the leading high-κ contenders, we have performed a detailed analysis of Hf-based gate stacks, exploiting alternative structures and compositions. The introduction of a SiO<sub>2</sub> interfacial layer between the channel and the HfO<sub>2</sub> reduces the detrimental mobility degradation resulting from the mobility SO phonon scattering, but increases the equivalent oxide thickness (EOT) of the gate dielectric. A possible material of choice for the first commercial introduction of high-<sub>κ</sub> gate stacks is hafnium silicate (Si<sub>x</sub>Hf<sub>1</sub>−<sub>x</sub>O<sub>2</sub>), being thermally stable and offering a good compromise between small EOT and large electron mobility.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Watling, Dr Jeremy and Roy, Professor Scott and Asenov, Professor Asen |
| Authors: | Ferrari, G., Watling, J.R., Roy, S., Barker, J.R., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Non-Crystalline Solids |
| ISSN: | 0022-3093 |
| ISSN (Online): | 1873-4812 |
| Published Online: | 14 February 2007 |
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