Watling, J.R., Riddet, C., Chan, K.H. and Asenov, A. (2011) Simulation of hole-mobility in doped relaxed and strained Ge. Microelectronic Engineering, 88(4), pp. 462-464. (doi: 10.1016/j.mee.2010.11.017)
Full text not currently available from Enlighten.
Abstract
As silicon CMOS begins to reach the limits of its performance, alternative channel materials are being considered. Thus there is renewed interest in employing Germanium for p-MOSFETs, due to the significant improvement in hole mobility as compared to silicon for undoped materials. Of considerable interest from a device point of view is the transport in doped layers. We investigate hole transport at high carrier-densities in doped Germanium layers using a bulk 6-band k·p Monte Carlo simulator, and show that both dynamic and multi-ion screening play a significant role in describing the resulting transport.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Watling, Dr Jeremy and Asenov, Professor Asen and Riddet, Mr Craig |
| Authors: | Watling, J.R., Riddet, C., Chan, K.H., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Microelectronic Engineering |
| ISSN: | 0167-9317 |
| Published Online: | 17 November 2010 |
University Staff: Request a correction | Enlighten Editors: Update this record
Funder and Project Information
Funder and Project Information