Wang, X., Brown, A.R., Cheng, B. and Asenov, A. (2011) Statistical variability and reliability in nanoscale FinFETs. In: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA, 5-7 Dec 2011, 5.4.1-5.4.4. (doi: 10.1109/IEDM.2011.6131494)
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62470.pdf - Accepted Version 6MB |
Publisher's URL: http://dx.doi.org/10.1109/IEDM.2011.6131494
Abstract
A comprehensive full-scale 3D simulation study of statistical variability and reliability in emerging, scaled FinFETs on SOI substrate with gate-lengths of 20nm, 14nm and 10nm and low channel doping is presented. Excellent electrostatic integrity and resulting tolerance to low channel doping are perceived as the main FinFET advantages, resulting in a dramatic reduction of statistical variability due to random discrete dopants (RDD). It is found that line edge roughness (LER), metal gate granularity (MGG) and interface trapped charges (ITC) dominate the parameter fluctuations with different distribution features, while RDD may result in relatively rare but significant changes in the device characteristics.
| Item Type: | Conference Proceedings |
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| Additional Information: | (c) 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Brown, Mr Andrew and Cheng, Dr Binjie and Wang, Dr Xingsheng and Asenov, Professor Asen |
| Authors: | Wang, X., Brown, A.R., Cheng, B., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Copyright Holders: | Copyright © 2011 IEEE |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher. |
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