Statistical variability in n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, MGG and PBTI

Markov, S., Idris, N.M. and Asenov, A. (2011) Statistical variability in n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, MGG and PBTI. In: 2011 IEEE International SOI Conference, Tempe, AZ, 3-6 Oct 2011, pp. 1-2. (doi: 10.1109/SOI.2011.6081680)

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Statistical variability is a critical challenge to scaling and integration, affecting performance, leakage power, and reliability of devices, circuits, and systems. The UTB-FD SOI transistor-architecture dramatically reduces the statistical variability due to random dopant fluctuations (RDF), but other sources of variability remain pertinent, e.g. line edge roughness (LER), metal gate granularity (MGG) leading to work-function fluctuations, and interface trapped charge (ITC). The different physical nature of these phenomena affects the standard deviation and distribution of threshold voltage (V<sub>TH</sub>) in different ways, and leads to a de-correlation with the on current (I<sub>ON</sub>) of the transistor. These aspects have been extensively studied for ultra-scaled bulk-MOSFETs under various sources of variability experimentally or by physical device modelling, but have not been fully researched for FD-SOI devices a shortfall that this work aims to address.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Markov, Dr Stanislav and Asenov, Professor Asen
Authors: Markov, S., Idris, N.M., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
443791Atomic scale simulation of nanoelectronic devicesAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/E038344/1Electronic and Nanoscale Engineering