160 GHz 1.55 µm colliding-pulse mode-locked AlGaInAs/InP laser with reduced optical overlap

Hou, L. , Haji, M., Bryce, A.C. and Marsh, J.H. (2011) 160 GHz 1.55 µm colliding-pulse mode-locked AlGaInAs/InP laser with reduced optical overlap. In: IEEE Photonics 2011 Conference (IPC11), Arlington, VA, 9-13 Oct 2011, pp. 751-752. (doi: 10.1109/PHO.2011.6110768)

Abstract

Monolithic ~1.55μm colliding-pulse mode-locked AlGaInAs/InP lasers with 3 and 5 quantum wells are compared. The 3 well device emitted pulses at 162GHz, with a width of 0.98ps, energy of 0.16pJ and time-bandwidth product of 0.47.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marsh, Professor John and Bryce, Prof Ann and Hou, Dr Lianping and Haji, Dr Mohsin
• Authors: Hou, L., Haji, M., Bryce, A.C., and Marsh, J.H.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
45311	1	High power, high frequency mode-locked semiconductor lasers	Ann Bryce	Engineering & Physical Sciences Research Council (EPSRC)	EP/E065112/1	Electronic and Nanoscale Engineering