Hou, L. , Haji, M., Akbar, J., Marsh, J.H. and Bryce, A.C. (2012) AlGaInAs/InP monolithically integrated DFB laser array. IEEE Journal of Quantum Electronics, 48(2), pp. 137-143. (doi: 10.1109/JQE.2011.2174455)
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Publisher's URL: http://dx.doi.org/10.1109/JQE.2011.2174455
Abstract
The monolithic integration of four 1.50-mu m range AlGaInAs/InP distributed feed-back lasers with a 4x1 multimode-interference optical combiner, a curved semiconductor optical amplifier and an electroabsorption modulator using relatively simple technologies - sidewall grating and quantum well intermixing - has been demonstrated. The four channels span the wavelength range of 1530-1566 nm and can operate separately or simultaneously. The epitaxial structure was designed to produce a far field pattern at the output waveguide facet, which is as small as 21.2 degrees x 25.1 degrees, producing a coupling efficiency with an angled-end single mode fiber at twice that of a conventional device design.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John and Bryce, Prof Ann and Hou, Dr Lianping and Akbar, Mr Jehan and Haji, Dr Mohsin |
| Authors: | Hou, L., Haji, M., Akbar, J., Marsh, J.H., and Bryce, A.C. |
| College/School: | College of Science and Engineering > School of Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Journal of Quantum Electronics |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 0018-9197 |
| ISSN (Online): | 1558-1713 |
| Published Online: | 02 November 2011 |
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