AlGaInAs/InP monolithically integrated DFB laser array

Hou, L. , Haji, M., Akbar, J., Marsh, J.H. and Bryce, A.C. (2012) AlGaInAs/InP monolithically integrated DFB laser array. IEEE Journal of Quantum Electronics, 48(2), pp. 137-143. (doi: 10.1109/JQE.2011.2174455)

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The monolithic integration of four 1.50-mu m range AlGaInAs/InP distributed feed-back lasers with a 4x1 multimode-interference optical combiner, a curved semiconductor optical amplifier and an electroabsorption modulator using relatively simple technologies - sidewall grating and quantum well intermixing - has been demonstrated. The four channels span the wavelength range of 1530-1566 nm and can operate separately or simultaneously. The epitaxial structure was designed to produce a far field pattern at the output waveguide facet, which is as small as 21.2 degrees x 25.1 degrees, producing a coupling efficiency with an angled-end single mode fiber at twice that of a conventional device design.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Marsh, Professor John and Bryce, Prof Ann and Hou, Dr Lianping and Akbar, Mr Jehan and Haji, Dr Mohsin
Authors: Hou, L., Haji, M., Akbar, J., Marsh, J.H., and Bryce, A.C.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Journal of Quantum Electronics
Publisher:Institute of Electrical and Electronics Engineers
ISSN (Online):1558-1713
Published Online:02 November 2011

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1Electronic and Nanoscale Engineering