Martinez, A., Aldegunde, M., Seoane, N., Brown, A.R., Barker, J.R. and Asenov, A. (2011) Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors. IEEE Transactions on Electron Devices, 58(8), pp. 2209-2217. (doi: 10.1109/TED.2011.2157929)
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Publisher's URL: http://dx.doi.org/10.1109/TED.2011.2157929
Abstract
In this paper, we review and extend recent work on the effect of random discrete dopants on the statistical variability in gate-all-around silicon nanowire transistors. The electron transport is described using the nonequilibrium Green's function formalism. Full 3-D real-space and coupled-mode-space representations are used. Two different cross sections (i.e., 2.2 x 2.2 and 4.2 x 4.2 nm(2)) and two different channel lengths (i.e., 6 and 12 nm) have been considered. The resistivity associated with discrete dopants can be estimated from the averaged current-voltage characteristics. The threshold-voltage variability and the sub-threshold-slope variability are reduced greatly in the transistors with longer channel length. Both are smaller at equivalent channel lengths in the 2.2 x 2.2 nm2 device due to better electrostatic integrity. At the same time, the ON-state-current variability associated with the varying resistance of the access regions is virtually independent of the channel length. However, it is reduced greatly in the 4.2 x 4.2 nm2 transistor due to a fourfold increase in the number of dopants in the access regions and corresponding self-averaging effects. Finally, we present results for the smallest transistor combining two sources of variability (i.e., discrete random dopants and surface roughness) and phonon scattering.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Barker, Professor John and Brown, Mr Andrew and Asenov, Professor Asen and Martinez, Dr Antonio |
Authors: | Martinez, A., Aldegunde, M., Seoane, N., Brown, A.R., Barker, J.R., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Transactions on Electron Devices |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0018-9383 |
ISSN (Online): | 1557-9646 |
Published Online: | 21 July 2011 |
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