Study of discrete doping-induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations

Aldegunde, M., Martinez, A. and Barker, J.R. (2012) Study of discrete doping-induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations. IEEE Electron Device Letters, 33(2), pp. 194-196. (doi: 10.1109/LED.2011.2177634)

Abstract

The impact of discrete doping in junctionless gate-all-around n-type silicon nanowire transistors is studied using 3-D nonequilibrium Green's functions simulations. The studied devices have a 20 nm long gate and cross sections of 4.2 x 4.2 and 6.2 x 6.2 nm(2). The average doping concentration is 1020 cm(-3). The dopant distributions are randomly generated and modeled in a fully atomistic way. Phonon scattering, elastic and inelastic, is also included in the simulations. We show that junctionless nanowire transistors have a much higher subthreshold variability than their inversion mode counterparts for the equivalent geometry and doping level.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Barker, Professor John and Martinez, Dr Antonio
• Authors: Aldegunde, M., Martinez, A., and Barker, J.R.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Electron Device Letters
• ISSN: 0741-3106

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
53047	1	Quantum Transport Simulations of Next Generation Field Effect Transistors	Antonio Martinez	Engineering & Physical Sciences Research Council (EPSRC)	EP/I004084/1	Electronic and Nanoscale Engineering