Output power limitations and improvements in passively mode locked GaAs/AlGaAs quantum well lasers

Tandoi, G., Ironside, C.N., Marsh, J.H. and Bryce, A.C. (2012) Output power limitations and improvements in passively mode locked GaAs/AlGaAs quantum well lasers. IEEE Journal of Quantum Electronics, 48(3), pp. 318-327. (doi: 10.1109/JQE.2011.2180365)

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We report a novel approach for increasing the output power in passively mode locked semiconductor lasers. Our approach uses epitaxial structures with an optical trap in the bottom cladding that enlarges the vertical mode size to scale the pulse saturation energy. With this approach we demonstrate a very high peak power of 9.8 W per facet, at a repetition rate of 6.8 GHz and with pulse duration of 0.71 ps. In particular, we compare two GaAs/AlGaAs epilayer designs, a double quantum well design operating at 830 nm and a single quantum well design operating at 795 nm, with vertical mode sizes of 0.5 and 0.75 μm, respectively. We show that a larger mode size not only shifts the mode locking regime of operation toward higher powers, but also produces other improvements with respect to two main failure mechanisms that limit the output power, catastrophic optical mirror damage and catastrophic optical saturable absorber damage. For the 830-nm material structure, we also investigate the effect of nonabsorbing mirrors on output power and mode locked operation of colliding pulse mode locked lasers.

Item Type:Articles
Additional Information:(c) 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Glasgow Author(s) Enlighten ID:Ironside, Professor Charles and Marsh, Professor John and Bryce, Prof Ann and Tandoi, Mr Giuseppe
Authors: Tandoi, G., Ironside, C.N., Marsh, J.H., and Bryce, A.C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Journal of Quantum Electronics
Published Online:16 December 2011
Copyright Holders:Copyright © 2011 IEEE
First Published:First published in IEEE Journal of Quantum Electronics 48(3):318-327
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1Electronic and Nanoscale Engineering
507921Non-Cryogenic integrated optical magnetometers for Magnetocardiography (MCG) and Magnetoencephalography (MEG)Charles IronsideWellcome Trust (WELLCOME)089245/Z/09/ZENG - ENGINEERING ELECTRONICS & NANO ENG