Rezazadeh, A.A., Bashar, S.A., Sheng, H., Amin, F.A., Khalid, A.H. , Sotoodeh, M., Fantini, F. and Liou, J.J. (1999) Reliability investigation of InGaP/GaAs HBTs under current and temperature stress. Microelectronics Reliability, 39(12), pp. 1809-1816. (doi: 10.1016/S0026-2714(99)00189-4)
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Abstract
The reliability of InGaP/GaAs N–p–n heterojunction bipolar transistors (HBTs) with different base metal contact systems (Au/Zn/Au, Ti/Au, Ti/Pt/Au and the novel Ti/ZrB2/Au) undercurrent and temperaturestress is studied in this paper. We further report results of currentstress on three p-GaAs doping impurities namely Zn, Be and C. The effect of O+/H+ and O+/He+ ions, used in the fabrication of planar self-aligned HBTs, is also investigated in the stability of device dc current gain. The instability phenomena typical of each factors and their effects on the HBT characteristics are repor
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Khalid, Dr Ata-Ul-Habib |
Authors: | Rezazadeh, A.A., Bashar, S.A., Sheng, H., Amin, F.A., Khalid, A.H., Sotoodeh, M., Fantini, F., and Liou, J.J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Microelectronics Reliability |
ISSN: | 0026-2714 |
Published Online: | 02 December 1999 |
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