Gated lateral p-i-n junction device for light sensing

Abid, K. and Rahman, F. (2011) Gated lateral p-i-n junction device for light sensing. IEEE Photonics Technology Letters, 23(13), pp. 911-913. (doi: 10.1109/LPT.2011.2143396)

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Abstract

We describe a silicon-based lateral p-i-n junction device for light sensing applications. This device is based on metal-oxide-semiconductor (MOS) architecture and, therefore, has a gate for controlling its electrical operating point. Device fabrication is described in brief, followed by a description of the device's electrical and optoelectronic properties including current-voltage characteristics and optical transfer characteristics. It shows good linearity and high optical responsivity of 20 and 16 A/W for red and blue light, respectively. The associated gate can be used to control the quiescent operating point thus making it easy to interface the detector with ordinary metal-oxide-semiconductor field-effect transistors (MOSFETs).

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Rahman, Dr Faiz
Authors: Abid, K., and Rahman, F.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
ISSN:1041-1135

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