Scaling of hydrogen-terminated diamond FETs to Sub-100-nm gate dimensions

Moran, D.A.J. , Fox, O.J.L., McLelland, H., Russell, S. and May, P.W. (2011) Scaling of hydrogen-terminated diamond FETs to Sub-100-nm gate dimensions. IEEE Electron Device Letters, 32(5), pp. 599-601. (doi: 10.1109/LED.2011.2114871)

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We present the dc operation of hydrogen-terminated diamond field-effect transistors (FETs) with gate lengths of 1 μm to 50 nm. The 50-nm device metrics include a maximum drain current of 290 mA/mm and a peak extrinsic transconductance of 95 mS/mm. As the device gate length is reduced, peak intrinsic transconductance is increased substantially to a value of 650 mS/mm for the 50-nm device. A minimum I<sub>on</sub>/I<sub>off</sub> ratio of ~ 1.5 × 104 is maintained at this reduced gate dimension. These results appear highly promising for the improvement of hydrogen-terminated diamond FET high-frequency performance through reduction of the device gate length to sub-100-nm dimensions.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Russell, Dr Stephen and McLelland, Mrs Helen and Moran, Professor David
Authors: Moran, D.A.J., Fox, O.J.L., McLelland, H., Russell, S., and May, P.W.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Electron Device Letters

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
450861Ultra short gate length diamond FETs for high power/high frequency applicationsDavid MoranEngineering & Physical Sciences Research Council (EPSRC)EP/E054668/1ENG - ENGINEERING ELECTRONICS & NANO ENG