Bentley, S. et al. (2011) Electron mobility in surface- and buried- channel flatband In0.53Ga0.47As MOSFETs with ALD Al2O3 gate dielectric. IEEE Electron Device Letters, 32(4), pp. 494-496. (doi: 10.1109/LED.2011.2107876)
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Abstract
In this paper, we investigate the scaling potential of flatband III-V MOSFETs by comparing the mobility of surface and buried In<sub>0.53</sub>Ga<sub>0.47</sub>As channel devices employing an Atomic Layer Deposited (ALD) Al<sub>2</sub>O<sub>3</sub> gate dielectric and a delta-doped InGaAs/InAlAs/InP heterostructure. Peak electron mobilities of 4300 cm<sup>2</sup>/V·s and 6600 cm<sup>2</sup>/V·s at a carrier density of 3×1012 cm<sup>-2</sup> for the surface and buried channel structures respectively were determined. In contrast to similarly scaled inversion-channel devices, we find that mobility in surface channel flatband structures does not drop rapidly with electron density, but rather high mobility is maintained up to carrier concentrations around 4x10<sup>12</sup> cm<sup>-2</sup> before slowly dropping to around 2000 cm<sup>2</sup>/V·s at 1x10M<sup>13</sup> cm<sup>-2</sup>. We believe these to be world leading metrics for this material system and an important development in informing the III-V MOSFET device architecture selection process for future low power, highly scaled CMO
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Zhou, Dr Haiping and Thayne, Prof Iain and Bentley, Dr Steven and Paterson, Dr Gary and Thoms, Dr Stephen and Li, Dr Xu and Macintyre, Dr Douglas and Holland, Dr Martin |
Authors: | Bentley, S., Holland, M., Li, X., Paterson, G., Zhou, H., Ignatova, O., Macintyre, D., Thoms, S., Asenova, A., Shin, B., Ahn, J., McIntyre, P.C., and Thayne, I. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Micro and Nano Technology |
Journal Name: | IEEE Electron Device Letters |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0741-3106 |
ISSN (Online): | 1558-0563 |
Published Online: | 07 March 2011 |
Copyright Holders: | Copyright © 2011 IEEE |
First Published: | First published in IEEE Electron Device Letters 32 (4) : 494-496 |
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