Electron mobility in surface- and buried- channel flatband In0.53Ga0.47As MOSFETs with ALD Al2O3 gate dielectric.

Bentley, S. et al. (2011) Electron mobility in surface- and buried- channel flatband In0.53Ga0.47As MOSFETs with ALD Al2O3 gate dielectric. IEEE Electron Device Letters, 32(4), pp. 494-496. (doi: 10.1109/LED.2011.2107876)

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In this paper, we investigate the scaling potential of flatband III-V MOSFETs by comparing the mobility of surface and buried In<sub>0.53</sub>Ga<sub>0.47</sub>As channel devices employing an Atomic Layer Deposited (ALD) Al<sub>2</sub>O<sub>3</sub> gate dielectric and a delta-doped InGaAs/InAlAs/InP heterostructure. Peak electron mobilities of 4300 cm<sup>2</sup>/V·s and 6600 cm<sup>2</sup>/V·s at a carrier density of 3×1012 cm<sup>-2</sup> for the surface and buried channel structures respectively were determined. In contrast to similarly scaled inversion-channel devices, we find that mobility in surface channel flatband structures does not drop rapidly with electron density, but rather high mobility is maintained up to carrier concentrations around 4x10<sup>12</sup> cm<sup>-2</sup> before slowly dropping to around 2000 cm<sup>2</sup>/V·s at 1x10M<sup>13</sup> cm<sup>-2</sup>. We believe these to be world leading metrics for this material system and an important development in informing the III-V MOSFET device architecture selection process for future low power, highly scaled CMO

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Glasgow Author(s) Enlighten ID:Zhou, Dr Haiping and Thayne, Prof Iain and Bentley, Dr Steven and Paterson, Dr Gary and Thoms, Dr Stephen and Li, Dr Xu and Macintyre, Dr Douglas and Holland, Dr Martin
Authors: Bentley, S., Holland, M., Li, X., Paterson, G., Zhou, H., Ignatova, O., Macintyre, D., Thoms, S., Asenova, A., Shin, B., Ahn, J., McIntyre, P.C., and Thayne, I.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Micro and Nano Technology
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN (Online):1558-0563
Published Online:07 March 2011
Copyright Holders:Copyright © 2011 IEEE
First Published:First published in IEEE Electron Device Letters 32 (4) : 494-496

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
452481Silicon compatible process modules for III-V electronic devices.Iain ThayneEngineering & Physical Sciences Research Council (EPSRC)EP/F002610/1Electronic and Nanoscale Engineering