160 GHz harmonic mode-locked AlGaInAs 155μm strained quantum-well compound-cavity laser

Hou, L. , Haji, M., Dylewicz, R., Stolarz, P., Qiu, B., Avrutin, E. and Bryce, A. (2010) 160 GHz harmonic mode-locked AlGaInAs 155μm strained quantum-well compound-cavity laser. Optics Letters, 35(23), pp. 3991-3993. (doi: 10.1364/OL.35.003991)

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Publisher's URL: http://dx.doi.org/10.1364/OL.35.003991

Abstract

We characterized the reflectivity and the modal discrimination of intracavity reflectors (ICRs) with different numbers of slots and presented harmonic mode-locking operation of a monolithic semiconductor laser comprising a compound cavity formed by a single deeply etched slot ICR fabricated from 1.55μm AlGaInAs strained quantum well material. Gaussian pulses were generated at a 161.8GHz repetition rate with a pulse duration of 1.67ps and a time–bandwidth product of 0.81.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Dylewicz, Dr Rafal and Bryce, Prof Ann and Hou, Dr Lianping and Stolarz, Mr Piotr and Haji, Dr Mohsin
Authors: Hou, L., Haji, M., Dylewicz, R., Stolarz, P., Qiu, B., Avrutin, E., and Bryce, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Optics Letters
Publisher:Optical Society of America
ISSN:0146-9592
ISSN (Online):1539-4794
Published Online:23 November 2010

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1Electronic and Nanoscale Engineering