Magnetic field sensors based on charge transport in indium phosphide heterojunction bipolar transistors

Oxland, R.K. and Rahman, F. (2008) Magnetic field sensors based on charge transport in indium phosphide heterojunction bipolar transistors. In: UK Semiconductor 08 Conference, Sheffield, UK, 2-3 July 2008,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Rahman, Dr Faiz and Oxland, Dr Richard
Authors: Oxland, R.K., and Rahman, F.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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